Samsung, a global leader in memory solutions, has announced a new LPDDR5X DRAM chip that runs at 10.7Gbps and offers faster performance than its competitor SK Hynix’s LPDDR5T variant. The new chip is produced on a 12nm class process, making it smaller and ideal for use in on-device AI applications.
According to YongCheol Bae, Executive Vice President of Memory Product Planning at Samsung Electronics, the demand for low-power, high-performance memory continues to grow beyond mobile devices. LPDDR DRAM is expected to have broader applications in PCs, accelerators, servers, and automobiles. Samsung is committed to delivering optimized products for the on-device AI era through innovation and collaboration with customers.
The 10.7Gbps LPDDR5X from Samsung offers increased performance by over 25% and capacity by more than 30% compared to LPDDR5. It also increases the single package capacity of mobile DRAM to 32GB. The LPDDR5X includes power-saving technologies that improve power efficiency by 25% and allow the chip to enter low-power mode for extended periods.
Samsung plans to start mass production of the 10.7Gbps LPDDR5X DRAM in the second half of the year upon successful verification with mobile application processor (AP) and mobile device providers. This advancement in memory technology is set to impact various industries and applications further driving innovation and performance enhancements in the tech sector.
As technology continues to evolve at an unprecedented pace, companies like Samsung are constantly striving to keep up with these advancements while also delivering products that meet customer needs. With its latest announcement of a faster version of its LPDDR5X DRAM chip, Samsung is positioning itself as a leader in this rapidly growing industry while also paving the way for future innovations in memory technology.